HGTP5N120BND
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Part #:HGTP5N120BND
Manufacturer:onsemi
Package:TO-220AB
Product Type:IGBT Transistors / Modules
RoHS:
Specifications (Specs)
| Manufacturer | onsemi |
| Part Number | HGTP5N120BND |
| Product Type | IGBT Transistors / Modules |
| RoHS | Yes |
| Package / Case | TO-220AB |
| Stock | 588 |
| MOQ | 1 |
| Order Multiple | 1 |
| Packaging | Tube-packed |
| Factory Pack Quantity | 50 |
| Type | NPT (non-penetrating type) |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Collector Current (Ic) | 21A |
| Power Dissipation (Pd) | 167W |
| Turn?on Delay Time (Td(on)) | 22ns |
| Total Gate Charge (Qg@Ic,Vge) | 53nC |
| Turn?off Delay Time (Td(off)) | 160ns |
| Diode Reverse Recovery Time (Trr) | 65ns |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.7V@15V,5A |
Documents & Compliance
Datasheet (PDF)
RoHS:
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