BC847BDW1T1G
Specifications (Specs)
| Manufacturer | onsemi |
| Part Number | BC847BDW1T1G |
| Product Type | Bipolar (BJT) |
| RoHS | Yes |
| Package / Case | SOT-363 |
| Stock | 19,881 |
| MOQ | 10 |
| Order Multiple | 10 |
| Packaging | Tape & Reel (TR) |
| Factory Pack Quantity | 3000 |
| Transistor Type | NPN |
| Operating Temperature | -55℃~+150℃ |
| Collector Current (Ic) | 100mA |
| Power Dissipation (Pd) | 380mW |
| Transition Frequency (fT) | 100MHz |
| DC Current Gain (hFE@Ic,Vce) | 150@10uA,5.0V |
| Collector Cut-Off Current (Icbo) | 5uA |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 0.25V@10mA,0.5mA |
Documents & Compliance
Datasheet (PDF)
RoHS:

Availability & Pricing
19,881
In Stock
MOQ:10
Multiple:10