SQJ886EP-T1_GE3
Specifications (Specs)
| Manufacturer | Vishay Intertech |
| Part Number | SQJ886EP-T1_GE3 |
| Product Type | MOSFETs |
| RoHS | Yes |
| Package / Case | SO-8-4 |
| Stock | 2,029 |
| MOQ | 1 |
| Order Multiple | 1 |
| Packaging | Tape & Reel (TR) |
| Factory Pack Quantity | 3000 |
| Type | null |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Power Dissipation (Pd) | 55W |
| Total Gate Charge (Qg@Vgs) | 65nC@10V |
| Drain Source Voltage (Vdss) | 40V |
| Input Capacitance (Ciss@Vds) | 2922pF@20V |
| Continuous Drain Current (Id) | 60A |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 4.5mΩ@15.3A,10V |
Documents & Compliance
Datasheet (PDF)
RoHS:

Availability & Pricing
2,029
In Stock
MOQ:1
Multiple:1