MMST5551Q-7-F
Specifications (Specs)
| Manufacturer | Diodes Incorporated |
| Part Number | MMST5551Q-7-F |
| Product Type | Bipolar Transistors - BJT |
| RoHS | Yes |
| Package / Case | SOT-323 |
| Stock | 5,950 |
| MOQ | 10 |
| Order Multiple | 10 |
| Packaging | Tape & Reel (TR) |
| Factory Pack Quantity | 3000 |
| Transistor Type | NPN |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Collector Current (Ic) | null |
| Power Dissipation (Pd) | 200mW |
| Transition Frequency (fT) | 300MHz |
| DC Current Gain (hFE@Ic,Vce) | 80@10mA,5V |
| Collector Cut-Off Current (Icbo) | 50nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 160V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@5mA,50mA |
Documents & Compliance
Datasheet (PDF)
RoHS:

Availability & Pricing
5,950
In Stock
MOQ:10
Multiple:10