MJD45H11T4G
Specifications (Specs)
| Manufacturer | onsemi |
| Part Number | MJD45H11T4G |
| Product Type | Bipolar (BJT) |
| RoHS | Yes |
| Package / Case | TO-252(DPAK) |
| Stock | 25,616 |
| MOQ | 1 |
| Order Multiple | 1 |
| Packaging | Tape & Reel (TR) |
| Factory Pack Quantity | 2500 |
| Transistor Type | PNP |
| Operating Temperature | -55℃~+150℃ |
| Collector Current (Ic) | 8A |
| Power Dissipation (Pd) | 20W |
| Transition Frequency (fT) | 90MHz |
| DC Current Gain (hFE@Ic,Vce) | 60@2A,1V |
| Collector Cut-Off Current (Icbo) | 1uA |
| Collector-Emitter Breakdown Voltage (Vceo) | 80V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 1V@8A,0.4A |
Documents & Compliance
Datasheet (PDF)
RoHS:

Availability & Pricing
25,616
In Stock
MOQ:1
Multiple:1