STGB20M65DF2
Specifications (Specs)
| Manufacturer | STMicroelectronics |
| Part Number | STGB20M65DF2 |
| Product Type | IGBT Transistors / Modules |
| RoHS | Yes |
| Package / Case | D2PAK |
| Stock | 640 |
| MOQ | 1 |
| Order Multiple | 1 |
| Packaging | Tape & Reel (TR) |
| Factory Pack Quantity | 1000 |
| Type | FS(Field Stop) |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Collector Current (Ic) | 40A |
| Power Dissipation (Pd) | 166W |
| Turn?on Delay Time (Td(on)) | 26ns |
| Input Capacitance (Cies@Vce) | - |
| Turn?on Switching Loss (Eon) | 0.14mJ |
| Total Gate Charge (Qg@Ic,Vge) | 63nC |
| Turn?off Delay Time (Td(off)) | 108ns |
| Turn?off Switching Loss (Eoff) | 0.56mJ |
| Diode Reverse Recovery Time (Trr) | 166ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2V@15V,20A |
Documents & Compliance
Datasheet (PDF)
RoHS:

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