HGTD1N120BNS9A
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Part #:HGTD1N120BNS9A
Manufacturer:onsemi
Package:TO-252AA
Product Type:IGBT Transistors / Modules
RoHS:
Specifications (Specs)
| Manufacturer | onsemi |
| Part Number | HGTD1N120BNS9A |
| Product Type | IGBT Transistors / Modules |
| RoHS | Yes |
| Package / Case | TO-252AA |
| Stock | 904 |
| MOQ | 1 |
| Order Multiple | 1 |
| Packaging | Tape & Reel (TR) |
| Factory Pack Quantity | 2500 |
| Type | NPT (non-penetrating type) |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Collector Current (Ic) | 5.3A |
| Power Dissipation (Pd) | 60W |
| Turn?on Delay Time (Td(on)) | 15ns |
| Input Capacitance (Cies@Vce) | - |
| Turn?on Switching Loss (Eon) | 0.07mJ |
| Total Gate Charge (Qg@Ic,Vge) | 14nC |
| Turn?off Delay Time (Td(off)) | 67ns |
| Turn?off Switching Loss (Eoff) | 0.09mJ |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.9V@15V,1A |
Documents & Compliance
Datasheet (PDF)
RoHS:
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