STGB30M65DF2
Specifications (Specs)
| Manufacturer | STMicroelectronics |
| Part Number | STGB30M65DF2 |
| Product Type | IGBTs |
| RoHS | Yes |
| Package / Case | D2PAK |
| Stock | 321 |
| MOQ | 1 |
| Order Multiple | 1 |
| Packaging | Tape & Reel (TR) |
| Factory Pack Quantity | 1000 |
| Type | Trench Field Stop |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Collector Current (Ic) | 60A |
| Power Dissipation (Pd) | 258W |
| Input Capacitance (Cies@Vce) | - |
| Turn?on Switching Loss (Eon) | 0.3mJ |
| Pulsed Collector Current (Icm) | 120A |
| Turn?off Switching Loss (Eoff) | 0.96mJ |
| Diode Reverse Recovery Time (Trr) | 140ns |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | - |
Documents & Compliance
Datasheet (PDF)
RoHS:

Availability & Pricing